International Journal of Nanoscience and Nanotechnology

International Journal of Nanoscience and Nanotechnology

CNTFET-Based Analog and Digital Circuits: Design, Simulation and Comparative Analysis

Document Type : Research Paper

Authors
Roberto Marani 1
Anna Gina Perri 2
1 Institute of Intelligent Industrial Technologies and Systems for Advanced Manufacturing (STIIMA), National Research Council of Italy.
2 Department of Electrical and Information Engineering Polytechnic University of Bari Via E. Orabona, 4, 70125 Bari, Italy
10.22034/ijnn.2026.2065387.2677
Abstract
In this paper we propose a procedure that allows a comparative analysis of A/D circuits in CNTFET and MOS technology.
For the first technology we use a CNTFET model, already proposed by us and briefly recalled, while for the second one we use the BSIM4 model of the Advanced Design System (ADS) library.
As example of analog circuit, we consider the design of a basic current mirror, for which parameters of merit, such as relative error in reference current replication and small-signal output resistance, are evaluated in order to show the differences between the two considered technologies.
As example of digital circuits, we consider a NAND gate at different supply voltages and frequencies, for both technologies. All simulations are performed using the software Advanced Design System (ADS) which is compatible with the Verilog A programming language.
Keywords
CNTFET
CMOS
Modeling
Analog and Digital (A/D) Circuits
Advanced Device System (ADS)
Verilog-A
Subjects
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International Journal of Nanoscience and Nanotechnology
Volume 21, Issue 3
Summer 2025
Pages 169-174