Document Type : Research Paper
Electronic Devices Laboratory, Department of Electrical and Information Engineering, Polytechnic University of Bari, 70126, Bari, Italy
Institute of Intelligent Industrial Technologies and Systems for Advanced Manufacturing (STIIMA), National Research Council of Italy, 70125, Bari, Italy
In this review we present some design of CNTFET-based circuits, already proposed by us and here critically examined. For some of these, we compare the performance of proposed circuits both in CNTFET and CMOS technology. For CNTFET model, we use a compact, semi-empirical model, already proposed by us and briefly recalled, while, for the MOSFET model, we use the BSIM4 one of ADS library. Moreover in some design examples we compare our results with those obtained using the Stanford model. All simulations are carried out using the software ADS, which is compatible with the Verilog-A programming language.