Department of physics, University of Mazandaran, Babolsar, I. R. Iran
Abstract
The surface and interfacial analysis of silicon oxide film on silicon substrate is particularly crucial in the nano-electronic devices. For this purpose, series of experiments have been demonstrated to grow oxide film on Si (111) substrate. Then these films have been used to study the structure of the film by using X-ray photo emission spectroscopy (XPS) technique. The obtained results indicate that the photoemission measurements on the ultrathin oxide should be done at low take-off angles to emphasize the oxide features.
Bahari,A. and Delshadmanesh,M. (2008). Photoemission measurements of Ultrathin SiO2 film at low take-off angles. International Journal of Nanoscience and Nanotechnology, 4(1), 31-34.
MLA
Bahari,A. , and Delshadmanesh,M. . "Photoemission measurements of Ultrathin SiO2 film at low take-off angles", International Journal of Nanoscience and Nanotechnology, 4, 1, 2008, 31-34.
HARVARD
Bahari A., Delshadmanesh M. (2008). 'Photoemission measurements of Ultrathin SiO2 film at low take-off angles', International Journal of Nanoscience and Nanotechnology, 4(1), pp. 31-34.
CHICAGO
A. Bahari and M. Delshadmanesh, "Photoemission measurements of Ultrathin SiO2 film at low take-off angles," International Journal of Nanoscience and Nanotechnology, 4 1 (2008): 31-34,
VANCOUVER
Bahari A., Delshadmanesh M. Photoemission measurements of Ultrathin SiO2 film at low take-off angles. International Journal of Nanoscience and Nanotechnology, 2008; 4(1): 31-34.
