1
Catalysis Division, Department of Chemistry, University of Isfahan, Isfahan,
2
Catalysis Division, Department of Chemistry, University of Isfahan, Isfahan
Abstract
In this paper, ZnO thin film is deposited on slide glass substrate using the sol-gel process. Presenting well-defined orientation of ZnO thin films Nanostructure were obtained by dip coating of zinc acetate dihydrate, monoethanolamine (MEA), de-ionized water and isopropanol alcohol. The annealed ZnO thin films were transparent ca 85-90% in visible range with an absorption edges at about 375 nm. The morphologies and phase structure show that the ZnO/glass film is formed by a layer of ZnO nano-sized particles with average diameter of 40 nm. X-ray diffraction results showed polycrystalline wurtzite with a highest c-axis preferential (002) orientation with the only sharp X-ray diffraction peak at 34.40 corresponding to the hexagonal ZnO. The high c-axis orientation improved and the grain size increased by the annealing temperature. These results showed that the sol-gel deposited ZnO films have potential applications such as catalyst and transparent electrodes in optic and electronic devices.
Habibi, M., Khaledi Sardashti, M. (2008). Preparation and proposed mechanism of ZnO Nanostructure Thin Film on Glass with Highest c-axis Orientation. International Journal of Nanoscience and Nanotechnology, 4(1), 13-16.
MLA
M. H. Habibi; M. Khaledi Sardashti. "Preparation and proposed mechanism of ZnO Nanostructure Thin Film on Glass with Highest c-axis Orientation". International Journal of Nanoscience and Nanotechnology, 4, 1, 2008, 13-16.
HARVARD
Habibi, M., Khaledi Sardashti, M. (2008). 'Preparation and proposed mechanism of ZnO Nanostructure Thin Film on Glass with Highest c-axis Orientation', International Journal of Nanoscience and Nanotechnology, 4(1), pp. 13-16.
VANCOUVER
Habibi, M., Khaledi Sardashti, M. Preparation and proposed mechanism of ZnO Nanostructure Thin Film on Glass with Highest c-axis Orientation. International Journal of Nanoscience and Nanotechnology, 2008; 4(1): 13-16.