Iranian Nanotechnology Society International Journal of Nanoscience and Nanotechnology 1735-7004 20 1 2024 03 01 Impact of the CNT Parameter Variations on Performance of Digital Circuits Based on CNTFET 33 46 711962 10.22034/ijnn.2024.2014292.2447 EN Roberto Marani Institute of Intelligent Industrial Technologies and Systems for Advanced Manufacturing (STIIMA), National Research Council of Italy, 70125, Bari, Italy Anna Gina Perri Electronic Devices Laboratory, Department of Electrical and Information Engineering, Polytechnic University of Bari, 70126, Bari, Italy 0000-0003-4949-987X Journal Article 2023 02 05 <em>   In this paper we propose a method to study the impact of the CNT parameter variations on performance of CNTFET digital circuits. In particular we consider CNT parameters that fully identify the geometrical properties of a regular CNT, which are the length and structural indices (n, m) of CNT. We analyse in particular the effects on NAND gate using a N and P type CNTFET, polarizing at a fixed voltage and varying the CNT parameters.  As regards the indices, we limit the analysis to zig-zag CNT, highlighting that </em><em>the proposed procedure can be applied to other types of CNT</em><em>.</em> https://www.ijnnonline.net/article_711962_ece77940102672d923f147143e3b054b.pdf