Iranian Nanotechnology Society International Journal of Nanoscience and Nanotechnology 1735-7004 19 3 2023 08 31 Analysis and Design of CNTFET-Based ‎Electronic Circuits: A Review 149 164 707288 10.22034/ijnn.2023.2004431.2386 EN Roberto Marani Electronic Devices Laboratory, Department of Electrical and Information Engineering, ‎Polytechnic University of Bari, 70126, Bari, Italy Anna Gina Perri Institute of Intelligent Industrial Technologies and Systems for Advanced Manufacturing ‎‎(STIIMA), National Research Council of Italy, 70125, Bari, Italy‎ 0000-0003-4949-987X Journal Article 2023 06 10 In this review we present some design of CNTFET-based circuits, already proposed by us and here critically examined. For some of these, we compare the performance of proposed circuits both in CNTFET and CMOS technology. For CNTFET model, we use a compact, semi-empirical model, already proposed by us and briefly recalled, while, for the MOSFET model, we use the BSIM4 one of ADS library. Moreover in some design examples we compare our results with those obtained using the Stanford model. All simulations are carried out using the software ADS, which is compatible with the Verilog-A programming language.

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