Iranian Nanotechnology Society International Journal of Nanoscience and Nanotechnology 1735-7004 7 4 2011 12 01 The Effects of Strained Multiple Quantum Well on the Chirped DFB-SOA All Optical Flip-Flop 190 196 3931 EN M. Jabbari Department of Electrical Engineering, Marvdasht branch, Islamic Azad University, Marvdasht, I. R. Iran. M. K. Moravvej-Farshi Advanced Device Simulation Lab, Electrical and Computer Engineering Department, Tarbiat Modares University, I. R. Iran R. Ghayour Electrical Engineering Department, Shiraz University, Shiraz, I. R. Iran A. Zarifkar Iran Telecommunication Research Center, Tehran, I. R. Iran Journal Article 2011 11 01 In this paper, based on the coupled-mode and carrier rate equations, a dynamic model and numerical analysis of a multi quantum well (MQW) chirped distributed feedback semiconductor optical amplifier (DFB-SOA)  all-optical flip-flop is precisely derived. We have analyzed the effects of strains of QW and MQW and cross phase modulation (XPM) on the dynamic response, and rise and fall times of the DFB-SOA all optical flip flop. We have shown that strained MQW active region under an optimized condition into a DFB-SOA with chirped grating can improve the switching ON speed limitation in the abovementioned device, significantly while the fall time is increased. The values of the rise times for such an all optical flip-flop, are obtained in an optimized condition, areas tr=255ps. https://www.ijnnonline.net/article_3931_acff1af62d0f91f4be73f4857552d70c.pdf