Iranian Nanotechnology Society International Journal of Nanoscience and Nanotechnology 1735-7004 15 1 2019 03 01 Electronic and Optical Properties of AlN Nanosheet Under Uni-axial Strain 21 26 34401 EN F. Ghasemzadeh Faculty of Physics, Kharazmi University, 31979-37551, Tehran, Iran. F. Kanjouri Faculty of Physics, Kharazmi University, 31979-37551, Tehran, Iran. Journal Article 2017 04 15 <em>   We have investigated the electronic and optical properties of AlN hexagonal nanosheets under different kinds of strains, using the band structure results obtained through the full potential linearized augmented plane wave method within the density functional theory. The results show that 10% uniaxial strain along the zig-zag direction induces an indirect to direct band-gap transition. The dielectric tensor and corresponding optical properties are derived within the random phase approximation. Specifically, the dielectric function, reflectivity and refractive index of AlN nanosheets are calculated for both parallel </em>( )<em> and perpendicular </em>( )<em> electric field polarizations.</em> https://www.ijnnonline.net/article_34401_821b56bbd7c4ce329a0b7664561b30e7.pdf