Iranian Nanotechnology Society International Journal of Nanoscience and Nanotechnology 1735-7004 14 2 2018 05 01 Static Simulation of CNTFET-based Digital Circuits 121 131 31220 EN R. Marani Consiglio Nazionale delle Ricerche, Istituto di Studi sui Sistemi Intelligenti per l'Automazione (ISSIA), Bari, Italy. A. G. Perri Electronic Devices Laboratory, Department of Electrical and Information Engineering, Polytechnic University of Bari, Italy. 0000-0003-4949-987X Journal Article 2017 11 27 In this paper we implement a simple DC model for CNTFETs already proposed by us in order to carry out static analysis of basic digital circuits. To verify the validity of the obtained results, they are compared with those of Wong model, resulting in good agreement, but obtaining a lighter ensuring compile and shorter execution time, which are the main characteristics to have an easy implementation in circuit simulators for CAD applications.

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