Iranian Nanotechnology Society International Journal of Nanoscience and Nanotechnology 1735-7004 17 2 2021 05 01 Comparative Analysis of Noise in Current ‎Mirror Circuits based on CNTFET and MOS ‎Devices 123 131 244185 EN R. Marani Institute of Intelligent Industrial Technologies and Systems for Advanced Manufacturing ‎‎(STIIMA), National Research Council of Italy‎ 0000-0002-5599-903X A. G. Perri Electronic Devices Laboratory, Department of Electrical and Information Engineering, ‎Polytechnic University of Bari, Italy 0000-0003-4949-987X Journal Article 2021 03 23    <em>In this paper we</em><em> study an application of CNTFET in the design of current mirrors, key components of analogue circuits, in order to examine the noise behavior of  CNTFETs. We compare the CNTFET with a MOSFET of comparable scale and we present the results obtained using simulation for two different current mirror circuits, each time with different current values. To achieve this goal we use a semi-empirical compact CNTFET model, already proposed by us, including noise source contributions, and the BSIM4 model for MOS device. After the simulation of the I-V curves, the differential output resistance and the output impedance at various frequencies, we present the spectral density of output noise current, obtaining for all proposed cases that the output noise current is always higher for the CNTFET than for the MOS device. </em> https://www.ijnnonline.net/article_244185_42becfde700e76acd897e8b66afcfc0f.pdf