International Journal of Nanoscience and Nanotechnology

International Journal of Nanoscience and Nanotechnology

Low-Power High-Frequency Phase ‎Frequency Detector Based on Carbon ‎Nano-Tube FET with Zero Dead-Zone for ‎CPPLL

Document Type : Research Paper

Authors
Abbas Shakeri
Mehdi Radmehr
Alireza Ghorbani
Department of Electrical Engineering, Islamic Azad University, Sari Branch, Sari, Iran
10.22034/ijnn.2023.538289.2093
Abstract
   Achieving low power consumption and low delay are the most important goals that efforts have been made to reach. In this paper, the process of designing and optimizing the Phase Frequency Detector (PFD) performance at the integrated circuits (IC) level has been proposed using carbon nanotubes. In the proposed method, by using carbon nanotube transistors, improvements have been made in the output parameters of the phase detector. Failure to use flip-flops and the simple circuit structure will significantly increase speed and reduce power consumption. Post-layout simulation for 180nm CMOS technology and simulation results for 32nm Carbon Nanotube Field-Effect Transistor (CNTFET) technology is presented. The proposed CMOS 28T phase detector circuit, by injecting 30mV peak-to-peak power supply noise has 5× better operating frequency of the conventional circuit, and it has a 10% improvement in power consumption of the conventional one. Also, with carbon nanotubes, the frequency has increased 4 times, and the power consumption has improved significantly. In this case, the power consumption is 1.76 microwatts, and the operating frequency is 20 GHz. Open-loop design and elimination of the reset path, and attention to delays to remove the dead zone are the proposed circuit's top features compared with the traditional design methods.
Keywords
Phase-frequency detector
Zero dead-zone
Low power consumption
High frequency
Carbon ‎nanotubes.‎

Subjects

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International Journal of Nanoscience and Nanotechnology
Volume 19, Issue 3
Summer 2023
Pages 173-186