Faculty of Physics, Kharazmi University, 31979-37551, Tehran, Iran.
Abstract
We have investigated the electronic and optical properties of AlN hexagonal nanosheets under different kinds of strains, using the band structure results obtained through the full potential linearized augmented plane wave method within the density functional theory. The results show that 10% uniaxial strain along the zig-zag direction induces an indirect to direct band-gap transition. The dielectric tensor and corresponding optical properties are derived within the random phase approximation. Specifically, the dielectric function, reflectivity and refractive index of AlN nanosheets are calculated for both parallel ( ) and perpendicular ( ) electric field polarizations.
Ghasemzadeh, F., Kanjouri, F. (2019). Electronic and Optical Properties of AlN Nanosheet Under Uni-axial Strain. International Journal of Nanoscience and Nanotechnology, 15(1), 21-26.
MLA
F. Ghasemzadeh; F. Kanjouri. "Electronic and Optical Properties of AlN Nanosheet Under Uni-axial Strain". International Journal of Nanoscience and Nanotechnology, 15, 1, 2019, 21-26.
HARVARD
Ghasemzadeh, F., Kanjouri, F. (2019). 'Electronic and Optical Properties of AlN Nanosheet Under Uni-axial Strain', International Journal of Nanoscience and Nanotechnology, 15(1), pp. 21-26.
VANCOUVER
Ghasemzadeh, F., Kanjouri, F. Electronic and Optical Properties of AlN Nanosheet Under Uni-axial Strain. International Journal of Nanoscience and Nanotechnology, 2019; 15(1): 21-26.
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