Document Type : Research Paper
Institute of Intelligent Industrial Technologies and Systems for Advanced Manufacturing (STIIMA), National Research Council of Italy
Electronic Devices Laboratory, Department of Electrical and Information Engineering, Polytechnic University of Bari, Italy
In this paper we present a comparison of temperature dependence of I-V characteristics in Carbon Nanotube Field Effect Transistor (CNTFET) models proposed in the literature in order to identify the one more easily implementable in simulation software for electronic circuit design. At first we consider a compact, semi-empirical model, already proposed by us, performing I-V characteristic simulations at different temperatures. Our results are compared with those obtained with the Stanford-Source Virtual Carbon Nanotube Field-Effect Transistor model (VS-CNFET), obtaining I-V characteristics comparable, but with CPU calculation times much lower.