Document Type : Research Paper
1. Nizhny Novgorod State University, 23 Gagarin avenue, Nizhny Novgorod, 603950, Russia 3. Nizhny Novgorod Academy of the Ministry of Internal Affairs of Russia, 3 Ankudinovskoe Shosse, Nizhny Novgorod, 603950, Russia
1. Nizhny Novgorod State University, 23 Gagarin avenue, Nizhny Novgorod, 603950, Russia 2. Nizhny Novgorod State University of Architecture and Civil Engineering, 65 Il'insky street, Nizhny Novgorod, 603950, Russia
It has been recently shown that manufacturing p-n-junctions, field-effect and bipolar transistors, thyristors in a multilayer structure by diffusion or ion implantation with the optimization of dopant and/or radiation defects leads to increase the sharpness of p-n-junctions (both single p-n-junctions and p-n-junctions framework their system). Due to the optimization, one can also obtain increasing of homogeneity of dopant in doped area. In this paper, we consider manufacturing of a field-effect heterotransistor without p-njunction. Framework the approach of manufacturing, we consider a heterostructure with specific configuration, doping required parts of the heterostructure by dopant diffusion or by ion implantation and optimization of annealing of dopant and/or radiation defects. The optimization gives us possibility to decrease dimensions of field-effect transistors. We introduce an analytical approach to model technological processes without crosslinking concentrations of dopant and radiation defects on interfaces between layers of heterostructure.