@article { author = {Marani, R. and Perri, A. G.}, title = {A Procedure to Analyze a CNTFET-Based ‎NOT Gate with Parasitic Elements of ‎Interconnection Lines}, journal = {International Journal of Nanoscience and Nanotechnology}, volume = {17}, number = {3}, pages = {161-171}, year = {2021}, publisher = {Iranian Nanotechnology Society}, issn = {1735-7004}, eissn = {2423-5911}, doi = {}, abstract = {   In this paper we analyze an application of CNTFET in the design of NOT gate, in which parasitic elements of interconnection lines are considered. At first we study the time domain analysis of NOT gate without to consider the parasitic elements of interconnection lines, in order to compare the obtained results with those in which the parasitic elements are considered, showing how they limit the high-speed performances of CNTs.}, keywords = {CNTs,CNTFET,Modelling,NOT gate,Integrated Circuit Interconnections,VLSI,ADS.‎}, url = {https://www.ijnnonline.net/article_245846.html}, eprint = {https://www.ijnnonline.net/article_245846_3d984ab4e68d6d7683006d04d5af7027.pdf} }